Electronic Devices Circuits Semiconductor Physics Online Exam Quiz
Electronic Devices Circuits Semiconductor Physics GK Quiz. Question and Answers related to Electronic Devices Circuits Semiconductor Physics. MCQ (Multiple Choice Questions with answers about Electronic Devices Circuits Semiconductor Physics
A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
Options
A : 1.9 eV
B : 1.3 eV
C : 2.6 eV
D : 0.64 eV
In silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy, the value of p0 is
Options
A : 2 x 1015 cm3
B : 1015 cm3
C : 3 x 1015 cm3
D : 4 x 1015 cm3
In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is
Options
A : 2.97 x 109 cm3
B : 2.68 x 1012 cm3
C : 2.95 x 1013 cm3
D : 2.4 cm3
The thermal-equilibrium concentration of hole p0 in silicon at T = 300 K is 1015 cm3. The value of n0 is
Options
A : 3.8 x 108 cm3
B : 4.4 x 104 cm3
C : 2.6 x 104 cm3
D : 4.3 x 108 cm3
Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is
Options
A : 4396 cm2/V-s 2
B : 3 x 104 cm2/V-s
C : 6 x 104 cm2V-s
D : 3333 cm2/V-s
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