Electronic Devices and Circuits - Part 1 Online Exam Quiz
Electronic Devices and Circuits - Part 1 GK Quiz. Question and Answers related to Electronic Devices and Circuits - Part 1. MCQ (Multiple Choice Questions with answers about Electronic Devices and Circuits - Part 1
At room temperature the current in an intrinsic semiconductor is due to
Options
A : holes
B : electrons
C : ions
D : holes and electrons
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Options
A : True
B : False
C : -
D : -
The most commonly used semiconductor material is
Options
A : silicon
B : germanium
C : mixture of silicon and germanium
D : none of the above
In which of these is reverse recovery time nearly zero?
Options
A : Zener diode
B : Tunnel diode
C : Schottky diode
D : PIN diode
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
Options
A : 100
B : 99
C : 1.01
D : 0.99
In p - n - p transistor the current I E has two components viz. I EP due to injection of holes from p -region to n -region and I E due to injection of electrons from n -region to p -region. Then
Options
A : I E p and I E n are almost equal
B : I E p >> I E n
C : I E n >> I E p
D : either (a) or (c)
In an n channel JFET, the gate is
Options
A : n type
B : p type
C : either n or p
D : partially n & partially p
The amount of photoelectric emission current depends on
Options
A : frequency of incident radiation
B : intensity of incident radiation
C : both frequency and intensity of incident radiation
D : none of the above
In the circuit of figure the function of resistor R and diode D are
Options
A : to limit the current and to protect LED against over voltage
B : to limit the voltage and to protect LED against over current
C : to limit the current and protect LED against reverse breakdown voltage.
D : none of the above.
At very high temperatures the extrinsic semi conductors become intrinsic because
Options
A : drive in diffusion of dopants and carriers
B : band to band transition dominants over impurity ionization
C : impurity ionization dominants over band to band transition
D : band to band transition is balanced by impurity ionization
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