Question: Consider a bar of silicon having carrier concentration n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?
Options
A : 0.2982 eV
B : 0.2984 eV
C : 0.5971 eV
D : 1Ev
Electronic Devices Circuits Fermi Level Semiconductor Impurities more questions
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